期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 123, 期 -, 页码 274-279出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2018.09.007
关键词
Gallium nitride; Schottky barrier diode; Titanium nitride; Temperature sensor
资金
- Fundamental research funds for the central universities [20187612031610010]
- Guangdong Natural Science Foundation [2015A030312011]
- Science and Technology Plan of Guangdong Province, China [2017B010112002]
The characteristics of GaN Schottky barrier diodes fabricated with TiN and Ni anodes were evaluated in the temperature range from 25 to 175 degrees C. The Schottky barrier height (ideality factor) increases (decreases) with increasing temperature for both kinds of diodes owing to the barrier height being nonhomogeneous. The GaN diode with TiN anode presents better interface quality and thermal stability is adopted for temperature sensing application. It demonstrated that the sensitivity of the TiN diode is approximately 1 mV/K and varies only slightly for all current levels.
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