期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 123, 期 -, 页码 280-285出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2018.09.009
关键词
LDMOS; High-k dielectric; Breakdown voltage; Specific on-resistance
资金
- National Basic Research Program of China [2015CB351906]
- National Natural Science Foundation of China [61774114]
- Science Foundation for Distinguished Young Scholars of Shaanxi Province [2018JC-017]
- 111 Project [B12026]
- Key Program of the National Natural Science Foundation of China [61334002]
A novel folded-accumulation LDMOS (FALDMOS) employing high-permittivity (HK) material as the partial field dielectric (HK-FALDMOS) is proposed and investigated by simulation. The device features the high-k dielectric partially replacing conventional SiO2 as the field oxide covering partial drift region and the gate electrode extending to the drain electrode. In the ON-state, the majority-carrier accumulation effect of HK-FALDMOS is more intense than that of FALDMOS, which is attributed to the larger capacitance of high-k film with the same dielectric thickness. Besides, a higher doping concentration in drift region I is obtained due to the electric field modulation effect resulting from the employed high-k film, which further reduces the specific on-resistance (R-on,R-sp) of the drift region I. The breakdown voltage (BV) declines slightly with the increase of permittivity of high-k film. Simulation results show that the proposed HK-FALDMOS has best-in-class R-on,R-sp-BV performance (9.9 m Omega mm(2) with BV of 44.9 V when the relative permittivity of high-k is 8), which breaks the silicon limit of LDMOS.
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