期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 72, 期 -, 页码 194-203出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2014.04.016
关键词
MOS-HEMT; High-k; Stacked gate dielectrics; InGaAs/AlGaAs
资金
- National Science Council of the Republic of China [NSC 102-2221-E-035-084]
Composite HfO2/Al2O3-dielectric In0.2Ga0.8As/Al0.24Ga0.76As metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using RF sputtering/ozone water oxidization, respectively, are investigated. In comparison with a conventional Schottky-gate device on the same epitaxial structure, an Al2O3 liner was chemically formed for the present MOS-HEMT to improve interfacial quality and decrease gate leakages. Moreover, a high-k HfO2 layer was further deposited on the Al2O3 liner to enhance the gate modulation capability. The present MOS-HEMT with the devised HfO2/Al2O3 dielectric stack has demonstrated excellent. switching characteristics, including superior subthreshold slope (S.S.) of 70 mV/dec and high drain-source current (I-DS) on-off ratio of up to 6 orders. Improved direct-current (DC), radio-frequency (RF), and high-temperature device performances of the present design are also comprehensively studied in this work. (C) 2014 Elsevier Ltd. All rights reserved.
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