期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 52, 期 6, 页码 1093-1102出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2012.07.001
关键词
Graphene FETs; Graphene nanoribbons; Gate capacitance; Quantum capacitance; Electron-hole puddles
A semi-analytical model for the capacitance-voltage characteristics of graphene nanoribbon field-effect transistors (GNR-FETs), in the quantum capacitance limit, is presented. The model incorporates the presence of electron-hole puddles induced by local potential fluctuations assuming a Gaussian distribution associated with these puddles. Our numerical results show that the multipeaks in the non-monotonic quantum capacitance-voltage characteristics are broadened as the potential fluctuation strength increases and the broadening effect is much more pronounced in wide GNRs. The influence of both gate-insulator thickness and dielectric constant scaling on the total gate-capacitance characteristics is also explored. Gate capacitance has non-monotonic behavior with ripples for thin gate-insulators. However, as we go beyond the quantum capacitance limit by increasing insulator thickness or decreasing dielectric constant, the ripples are suppressed and smooth monotonic characteristics are obtained. (C) 2012 Elsevier Ltd. All rights reserved.
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