期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 45, 期 4-5, 页码 271-276出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2008.10.030
关键词
ZnO; Nanowires; Raman; Photoluminescence; SNOM
Single crystal ZnO nanowires with lengths and diameters ranging from 2 to 30 mu m and 100 to 300 nm, respectively, have been grown by the vapor transport method on SiO2/Si substrates using Au as catalyst. Their Raman and emission properties under different excitation wavelengths have been studied at the nanoscale. Whereas Raman measurements on nanowires corroborate the well-known ZnO phonon characteristics, their photoluminescence spectra exhibit a very broad emission band, mainly in the visible region from 450 to 800 nm, which corresponds to different defect-related recombination processes. Spectrally resolved scanning near-field optical microscopy, SNOM, of single ZnO nanowires have also been performed for a direct imaging of the photoluminescence emission with high spatial resolution below 100 nm, establishing a relationship with the simultaneously acquired topography. (c) 2008 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据