期刊
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
卷 24, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-2048/24/3/035016
关键词
-
资金
- European Commission [227290]
We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T-C) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T-C = 11.3 K and critical current density of about 2.5 MA cm(-2) at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.
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