期刊
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
卷 65, 期 12, 页码 1022-1028出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sab.2010.11.006
关键词
TXRF; VPT; Trace metallic contamination analysis; Semiconductor; Silicon wafer
类别
Vapor phase treatment (VPT) is a pretreatment with hydrofluoric acid vapor to raise the sensitivity of total reflection X-ray fluorescence spectroscopy (TXRF) for trace metal analysis on silicon wafers. The International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) has been investigating the method to analyze 10(9) atoms/cm(2) level of metallic contamination on the silicon wafer surface. Though VPT can enhance the TXRF signal intensity from the metallic contamination, it has turned out that the magnitude of the enhancement varies with the type of methods and the process conditions. In this study, approaches to increase TXRF intensity by VPT are investigated using a fuming chamber in an automated VPD instrument. Higher signal intensity can be obtained when condensation is formed on the sample surface in a humidifying atmosphere and with a decreasing stage temperature. Surface observations with SEM and AFM show that particles with similar to 4 mu m in diameter are formed and unexpectedly they are dented from the top surface level. (C) 2010 Elsevier B.V. All rights reserved.
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