期刊
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
卷 65, 期 6, 页码 445-449出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sab.2010.02.013
关键词
Grazing emission X-ray fluorescence (GEXRF); Depth profiling; Synchrotron radiation; High-resolution X-ray spectroscopy; Ion implantation
类别
The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10(16) atoms/cm(2) in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-K alpha X-ray fluorescence line with nanometer-scale precision. The experimental results were compared to theoretical predictions of the depth distributions resulting from ion implantation. A good agreement between experiment and theory was found which proved that the presented high-resolution grazing emission X-ray fluorescence technique is well suited to perform depth profiling measurements of impurities located within the extinction depth, provided the overall shape of the distribution can be assumed a priori. (C) 2010 Elsevier B.V. All rights reserved.
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