期刊
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
卷 65, 期 7, 页码 583-586出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sab.2010.05.008
关键词
EDXRF; Gallium nitride; Epitaxial layer thickness; Thin film; Semiconductor
类别
资金
- Spanish Ministry of Science and Innovation [MAT2007-63617, CGL207-66861]
- Spanish Council for Scientific Research
The importance of thin films in modern high technology products, such as semiconductors, requires fast and non-destructive analysis. A methodology to determine the thickness of single layers with benchtop energy dispersive X-ray fluorescence (EDXRF) instrumentation is described and tested following analytical validation criteria. The experimental work was carried out on gallium nitride thin films epitaxially grown on sapphire substrate. The results of samples with layers in the range from 400 to 1000 nm exhibit a good correlation with the layer thickness determined by optical reflectance. Spectral data obtained using thin layered samples indicate the possibility to precisely evaluate layer thickness from 5 nm, with a low relative standard deviation (RSD<2%) of the results. In view of the limits of optical reflectance for very thin layer determination, EDXRF analysis offers the potential for the thickness determination of such kind of samples. (C) 2010 Elsevier B.V. All rights reserved.
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