期刊
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
卷 120, 期 -, 页码 297-303出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.saa.2013.09.149
关键词
ZnO thin films; Ti doping; Raman; Photoluminescence; Resistivity
类别
资金
- University Grants commission, New Delhi [42-860/2013]
Zinc oxide films were doped with different concentrations of Ti on glass substrates at 400 degrees C by spray pyrolysis technique. The films exhibited single phase ZnO for low concentrations of Ti. Wurtzite ZnO peaks were observed at higher doping concentration with decreased crystallinity. Crystallite size, strain and dislocation density were evaluated from the X-ray diffraction data. Surface morphology of the films indicated that a remarkable decrease in grain size with increasing of Ti concentration. The band gap of the films was found to be increased from 3.20 eV to 332 eV as the concentration of Ti doping increases. The resistivity of the films decreased from 9 x 10(5) Omega cm to 9 x 10(4) Omega cm with the increase of Ti doping concentration. Both Raman spectroscopy and room temperature photoluminescence exhibited characteristic peaks that confirmed the formation of ZnO phase. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
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