期刊
SOLID-STATE ELECTRONICS
卷 99, 期 -, 页码 21-24出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2014.05.002
关键词
GaN; Light-emitting diode (LED); Indium-tin oxide (ITO); Current spreading; Stair-like structure
资金
- Ministry of Science and Technology of the Republic of China [NSC-100-2221-E-006-044-MY3, NSC-101-2221-E-006-142-MY3, NSC-102-2221-E-197-032]
A GaN-based light-emitting diode (LED) with a stair-like ITO layer is studied. The stair-like ITO structure is achieved by using a simple wet etching process. The current distribution could be adjusted by the different thickness of each step in this stair-like ITO layer. The current injected from p-pad is forced to be spread outside by the thicker ITO layer below the p-pad, which exhibits larger parasitic series resistance, instead of flowing downward directly. The current spreading effect could be enhanced. As compared with a conventional LED, at 20 mA, the studied device with a stair-like ITO layer shows 13.8% improvement in light output power. A lower turn-on voltage is also achieved. (C) 2014 Elsevier Ltd. All rights reserved.
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