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Graphene based field effect transistors: Efforts made towards flexible electronics

期刊

SOLID-STATE ELECTRONICS
卷 89, 期 -, 页码 177-188

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2013.08.007

关键词

Graphene; Field effect transistor; Flexible electronics; Chemical vapor deposition

资金

  1. Basic Research Program through the National Research Foundation of Korea (NRF) [2012R1A2A1A03006049, 2009-0083540]
  2. Ministry of Education, Science and Technology
  3. Technology Innovation Program [10041066]
  4. Ministry of Knowledge Economy (MIKE), Republic of Korea

向作者/读者索取更多资源

The integration of flexibility in existing electronics has been realized as a key point for practical application of unusual format electronics that can extend the application limit of biomedical equipments and of course daily routine kind of electronic devices. Graphene showed the great potentiality for flexible format owing to its excellent electronic, mechanical and optical properties. Field effect transistor (FET) is a basic unit for digital and analog electronics thus enormous efforts have been attempted to fabricate the flexible FETs in order to get the high performance. This article reviews the recent development of graphene based FETs including the fabrication and active layers material compatibility in flexible format. (C) 2013 Elsevier Ltd. All rights reserved.

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