期刊
SOLID-STATE ELECTRONICS
卷 90, 期 -, 页码 73-78出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2013.02.049
关键词
Flexible electronics; Ultrathin chips; SOI technology; CMOS; Millimetre waves
In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f(T)/f(MAx) amounting to 150/160 GHz for n-type and 100/130 GHz for p-type, respectively. Minimal noise figure and associated gain NFmin/G(ass) of 0.57 dB/17.8 dB and 0.57 dB/17.0 dB are measured at 10 GHz for n- and p-MOSFETs, respectively. (C) 2013 Elsevier Ltd. All rights reserved.
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