期刊
SOLID-STATE ELECTRONICS
卷 68, 期 -, 页码 103-107出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2011.10.030
关键词
Phosphorous; Interface trap density; Channel mobility; Threshold voltage stability
资金
- US Army Research Laboratory [W911NF-07-2-0046]
- National Science Foundation [DMR-0907385]
- II-VI Foundation
- NSF TeraGrid Resources [TG-DMR100022]
We describe experimental and theoretical studies to determine the effects of phosphorous as a passivating agent for the SiO2/4H-SiC interface. Annealing in a P2O5 ambient converts the SiO2 layer to PSG (phosphosilicate glass) which is known to be a polar material. Higher mobility (approximately twice the value of 30-40 cm(2)/V s obtained using nitrogen introduced with an anneal in nitric oxide) and lower threshold voltage are compatible with a lower interface defect density. Trap density, current-voltage and bias-temperature stress (BTS) measurements for MOS capacitors are also discussed. The BTS measurements point to the possibility of an unstable MOSFET threshold voltage caused by PSG polarization charge at the O-S interface. Theoretical considerations suggest that threefold carbon atoms at the interface can be passivated by phosphorous which leads to a lower interface trap density and a higher effective mobility for electrons in the channel. The roles of phosphorous in the passivation of correlated carbon dangling bonds, for SiC counter-doping, for interface band-tail state suppression, for Na-like impurity band formation and for substrate trap passivation are also discussed briefly. Published by Elsevier Ltd.
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