期刊
SOLID-STATE ELECTRONICS
卷 78, 期 -, 页码 68-74出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2012.05.050
关键词
Terahertz time domain spectroscopy; Carrier dynamics; Complex conductivity; Drude-Smith model; GaN; ZnO
资金
- Directorate For Engineering
- Div Of Industrial Innovation & Partnersh [1127831] Funding Source: National Science Foundation
We present a comprehensive study of the characteristics of carrier dynamics using temperature dependent terahertz time domain spectroscopy. By utilizing this technique in combination with numerical calculations, the complex refractive index, dielectric function, and conductivity of n-GaN, undoped ZnO NWs, and Al-doped ZnO NWs were obtained. The unique temperature dependent behaviors of major material parameters were studied at THz frequencies, including plasma frequency, relaxation time, carrier concentration and mobility. Frequency and temperature dependent carrier dynamics were subsequently analyzed in these materials through the use of the Drude and the Drude-Smith models. (C) 2012 Elsevier Ltd. All rights reserved.
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