期刊
SOLID-STATE ELECTRONICS
卷 67, 期 1, 页码 53-62出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2011.07.015
关键词
Graphene; Transistor; Small-signal model
资金
- Office of Naval Research
In this letter, a small-signal model for the graphene-based field effect transistor based on a physical description of the device's operation is presented. The small-signal model contains circuit elements similar to classical small-signal models for field effect transistors but these elements differ vastly in their behavior with bias, owing to the different physical behavior of these devices. Intrinsic and extrinsic small-signal models are presented. The high-frequency performance of the models in terms of short-circuit current gain and Mason's unilateral gain, and associated frequency figures-of-merit, are examined. Published by Elsevier Ltd.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据