期刊
SOLID-STATE ELECTRONICS
卷 78, 期 -, 页码 156-158出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2012.05.032
关键词
Boron carbide (BC); HWCVD; PECVD; SIMS; Ortho-carborane (o-C2B10H12); Neutron detector
Boron carbide films have been deposited on n-type crystalline silicon substrate by hot wire chemical vapor deposition technique using ortho-carborane precursor. The deposited films have been characterized by secondary ion mass spectrometry for their isotopic study which shows the presence of B-10 in the film making them suitable for thermal neutron absorber application. These films have a p-type semiconducting nature and hence can be employed to form a p-n junction with n-type silicon. We have demonstrated for the first time the formation of a p-n junction with films deposited by hot wire chemical vapor deposition technique. The current-voltage characteristics of the diode have been measured and the characteristics show low leakage current ((nA) under bar) in the reverse bias condition. From capacitance-voltage study, it is observed that the depletion width is of the order of few microns which is sufficient for detection of alpha particle released by B-10 in the n, alpha reaction. The results of this study indicate that hot wire chemical vapor deposited boron carbide/crystalline silicon diode could be used as a compact device for thermal neutron detection. (C) 2012 Elsevier Ltd. All rights reserved.
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