期刊
SOLID-STATE ELECTRONICS
卷 63, 期 1, 页码 110-114出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2011.05.008
关键词
Tunneling field-effect transistor (TFET); Band-to-band tunneling; Analytical modeling; Poisson's equation
资金
- National Research Foundation (NRF) of Korea
- Ministry of Education, Science and Technology (MEST) [2010-0019105, 2010-0027704]
- Ministry of Knowledge Economy (MKE) of Korea [NIPA-2011-C1090-1101-0003]
- Sogang University
- National Research Foundation of Korea [2009-0082439, 2009-0084522] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This paper presents a two-dimensional analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs). Potential and electric field intensity calculated by Poisson's equation are used to extract tunneling current values. The validity of the proposed model has been confirmed by comparing the analytical results with finite-element method (FEM) results. (C) 2011 Elsevier Ltd. All rights reserved.
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