期刊
SOLID-STATE ELECTRONICS
卷 57, 期 1, 页码 39-42出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2010.12.005
关键词
GaN; Homoepitaxy; MSM; Photodetector; Gain mechanism
资金
- State Key Program for Basic Research of China [2006CB921803, 2010CB327504]
- National Natural Science Foundation of China [60825401, 60806026, 60936004, 60721063]
- NCET [07-0417]
Metal-semiconductor-metal ultraviolet photodetectors are fabricated on low-defect-density homoepitaxial GaN layer on bulk GaN substrate. The dislocation density of the homoepitaxial layer characterized by cathodoluminescence mapping technique is similar to 5 x 10(6) cm(-2). The photodetector with a high UV-to-visible rejection ratio of up to 1 x 10(5) exhibits a low dark current of < 2 pA at room temperature under 10 V bias. The photo-responsivity of the photodetector gradually increases as a function of applied bias, resulting in a photodetector quantum efficiency exceeding 100% at above medium bias. The photo-responsivity also shows a dependence on the incident optical power density and illumination conditions. The internal gain mechanism of the photodetector is attributed to photo-generated holes trapped at the semiconductor/metal interface as well as high-field-induced image-force lowering effect. (C) 2010 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据