期刊
SOLID-STATE ELECTRONICS
卷 63, 期 1, 页码 115-118出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2011.05.007
关键词
Resistive switching memory; Oxygen vacancy; Interfacial reaction; Switching mechanism
资金
- National Research Foundation of Korea (NRF) [2009-0093818]
- Ministry of Education, Science and Technology
- NRF [2010-0000799]
Resistive memory switching behavior depending on voltage sweep direction is studied by intentionally creating oxygen vacancies within titanium dioxide (TiO2). By inserting a reactive Ti layer on the TiO2. oxygen deficient TiO2-x layer is created, which then causes TiO2-x/TiO2 which has an oxygen vacancy gradient. This gradient of oxygen vacancy makes it possible to create an insulating TiO2 layer on the bottom electrode during the first reset with a negative bias at the top electrode. This insulating layer makes counterclockwise directional bipolar switching more stable. On the other hand, under the clockwise directional voltage sweeping, the first set switching is prevented by the insulating TiO2 layers created during the first and second reset, which leads to a short circuit due to local heating eventually. (C) 2011 Elsevier Ltd. All rights reserved.
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