期刊
SOLID-STATE ELECTRONICS
卷 54, 期 6, 页码 671-674出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2010.02.002
关键词
Silicon; Compensation; Mobility; Thermal donors
资金
- ADEME (the French Agency for Energy and Environment)
- CEA
This letter focuses on the variation of the Hall majority carrier mobility with the dopant compensation level in purely Boron-doped Czochralski grown silicon single crystals. Compensation was varied continuously at the sample scale via a step by step activation of the oxygen-based thermal donors. At room temperature, we show a strong drop in mobility for high compensation levels in both p- and n-type Si. Mobility models taking into account carrier scattering on ionized impurities and phonons could not reproduce this drop. We conclude that a specific effect of compensation must be taken into account to explain the observed behaviour. We qualitatively discuss physical mechanisms susceptible to reduce mobility in highly compensated Si. (C) 2010 Elsevier Ltd. All rights reserved.
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