Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 degrees C) to obtain large grains and subsequent high-temperature annealing (500 degrees C) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 x 10(18) to 5 x 10(17) cm(-3) with keeping a high-mobility (140 cm(2)/Vs) after post-annealing. (C) 2009 Elsevier Ltd. All rights reserved.