期刊
SOLID STATE SCIENCES
卷 33, 期 -, 页码 58-66出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solidstatesciences.2014.04.008
关键词
BiVO4; Thin film; Sputtering; Dielectric constant; Optical constants
资金
- Department of Science and Technology, the Govt. of India [SR/S2/CMP-0063/2010]
- University Grants commission, The Govt. of India under the 'University with potential for excellence (UPEII)' scheme [F-1-10/12(NSPE)]
BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a prefabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 degrees C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4. (C) 2014 Elsevier Masson SAS. All rights reserved.
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