期刊
SOLID STATE SCIENCES
卷 14, 期 1, 页码 121-126出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solidstatesciences.2011.11.007
关键词
Nanofiber ZnO; Schottky diode; Semiconductor
资金
- Management Unit of Scientific Research Projects of Firat University (FUBAP) [1947]
- Global Research Network for Electronic Devices & Biosensors (GRNEDB)
- KING Saud University
Electrical and optical properties of the ZnO film prepared by sol-gel dip coating were investigated and ZnO film was deposited onto p-type silicon to obtain Ag/ZnO/p-Si heterojunction diode. Two dimensional atomic force microscopy images indicate that the ZnO film is formed from the fibers consisted from nanoparticles with grain size of 250-350 nm. The electrical conductivity mechanism of the ZnO film was varied from extrinsic to intrinsic conductivity. The calculated optical band gap of the ZnO film was found to be 3.22 eV. The Ag/ZnO/p-Si diode exhibit a non-linear behavior with ideality factor of n = 417 and barrier height of phi(B) = 0.79 eV. The electrical properties of the Ag/ZnO/p-Si diode were investigated by current voltage, capacitance-voltage-frequency and conductance-voltage-frequency measurements. (C) 2011 Elsevier Masson SAS. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据