期刊
SOLID STATE SCIENCES
卷 13, 期 2, 页码 480-483出版社
ELSEVIER
DOI: 10.1016/j.solidstatesciences.2010.12.016
关键词
Electronic structure; First-principles calculation
资金
- National Natural Science Foundation of China [61076088]
- Foundation for Young Scientist in Shandong Province [BS2009CL012]
- Technological Development Program in Shandong Education Department [J10LA16]
We perform first-principles calculations to investigate the role of carbon dopants in the magnetic properties of C-doped GaN system. Our results indicate that C: GaN system is in ferromagnetic ground state and the magnetization energy is larger than some of the known room-temperature DMS, which implies the high RT ferromagnetism for C: GaN can be expected. The indirect FM interaction between two C dopants may be explained via hole induced double exchange mechanism, which plays an important role in forming the long-range ferromagnetism in C-doped GaN systems. (C) 2010 Elsevier Masson SAS. All rights reserved.
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