MgZnO/ZnO p-n junction UV photodetector fabricated on sapphire substrate by plasma-assisted molecular beam epitaxy

We have investigated the spectral response of back- and front-surface-illumination MgZnO/ZnO p-n ultraviolet photodetector fabricated by plasma-assisted molecular beam epitaxy on sapphire substrate. The current-voltage measurements show that the device has a rectifying behavior with a turn-on voltage of 4.5 V. The detector exhibits a broad spectral response which covers the visible and UV spectra regions (from 275 to 375 nm) and has a maximum peak response at the wavelength of 330 nm. At a reverse bias of 5 V. the visible rejection (R330 nm/R500 nm) was more than two orders of magnitude. The peak responsivity at 330 nm for the device under back-illumination is about four times larger than that of the device under front-illumination under the same reverse bias. The response mechanisms of the device under back- and front-illumination are discussed. (C) 2010 Elsevier Masson SAS. All rights reserved.