期刊
SOLID STATE COMMUNICATIONS
卷 155, 期 -, 页码 49-52出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.11.010
关键词
Molybdenum disulfide; Nanofabrication; Electronic transport
资金
- NSF [DMR-1056859, EPS 1004083]
- Defense Threat Reduction Agency [HDTRA1-1-10-0047]
- Direct For Education and Human Resources
- Division Of Human Resource Development [932038] Funding Source: National Science Foundation
- Direct For Education and Human Resources
- Division Of Human Resource Development [930018] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Astronomical Sciences [849736] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1056859] Funding Source: National Science Foundation
We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS2) configured in field effect transistor geometry. We observe a hundredfold increase in photoluminescence intensity and an increase in absorption at similar to 660 nm in these devices when an external gate voltage is decreased from +50 to -50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS2 devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer devices are related to the interaction of the excitons in MoS2 with charge carriers. (C) 2012 Elsevier Ltd. All rights reserved.
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