期刊
SOLID STATE COMMUNICATIONS
卷 152, 期 10, 页码 835-838出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.02.023
关键词
Polydimethylsiloxane; Gold nanoparticles; Negative differential resistance; Charge trapping
Metal-insulator-metal (MIM) devices play an important role in information storage cells. In this research, a MIM with an insulator made from polydimethylsiloxane blended with gold nanoparticles has been investigated. The current-voltage characteristic demonstrates a negative differential resistance (NOR) and memory effect. This article attempts to explain the NDR and memory effect, using the charge trapping and releasing mechanisms of the gold nanoparticles and also electron tunneling mechanisms. (C) 2012 Elsevier Ltd. All rights reserved.
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