期刊
SOLID STATE COMMUNICATIONS
卷 152, 期 10, 页码 878-882出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.02.014
关键词
Disordered systems; Heterojunctions; Surfaces and interfaces; Electron-electron interaction
资金
- Department of Science and Technology, India
A metal-disordered and correlated barrier metal heterostructure is studied at half-filling using unrestricted Hartree Fock method. The corresponding clean system has been shown to be an insulator for any finite on site correlation. Interestingly we find that introduction of explicit disorder induces an inhomogeneous, plane dependent, modulated spin and charge order. There is a metal insulator transition at a critical value of disorder. The critical value corresponds to the point at which disorder kills the gap at half filling due to onsite correlation and completely destroys the plane dependent antiferromagnetic order. The wavefunctions are found to delocalize by increasing disorder, thus rendering the system metallic. (C) 2012 Elsevier Ltd. All rights reserved.
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