期刊
SOLID STATE COMMUNICATIONS
卷 152, 期 12, 页码 975-978出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.04.005
关键词
Graphene; Molecular beam epitaxy; Raman spectroscopy; AFM
资金
- ONR [N000140610138, Graphene MURI]
- AFOSR [FA9550-11-1-0010]
- EFRC Center for Re-Defining Photovoltaic Efficiency through Molecule Scale Control [DE-SC0001085]
- NSF [CHE-0641523]
- NYSTAR
- CSIC-PIF [2009501154]
- Spanish CAM [Q&C Light (S2009ESP-1503), Numancia 2 (S2009/ENE-1477)]
- Spanish MEC [ENE2009-14481-C02-02, TEC2011-29120-C05-04, MAT2011-26534]
- Grants-in-Aid for Scientific Research [24651148, 23310096] Funding Source: KAKEN
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms. (C) 2012 Elsevier Ltd. All rights reserved.
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