期刊
SOLID STATE COMMUNICATIONS
卷 151, 期 16, 页码 1100-1104出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2011.05.023
关键词
Graphene; Chemical vapor deposition; Grain boundary; Electronic transport
资金
- NSF
- CAM
- DTRA
- DHS
- IBM
- Miller Family Endowment
- Midwest Institute for Nanoelectronics Discovery (MIND)
- DOE
- State of Florida
We synthesize hexagonal shaped single-crystal graphene, with edges parallel to the zig-zag orientations, by ambient pressure CVD on polycrystalline Cu foils. We measure the electronic properties of such grains as well as of individual graphene grain boundaries, formed when two grains merged during the growth. The grain boundaries are visualized using Raman mapping of the D band intensity, and we show that individual boundaries between coalesced grains impede electrical transport in graphene and induce prominent weak localization, indicative of intervalley scattering in graphene. (C) 2011 Elsevier Ltd. All rights reserved.
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