4.4 Article

Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition

期刊

SOLID STATE COMMUNICATIONS
卷 151, 期 16, 页码 1100-1104

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2011.05.023

关键词

Graphene; Chemical vapor deposition; Grain boundary; Electronic transport

资金

  1. NSF
  2. CAM
  3. DTRA
  4. DHS
  5. IBM
  6. Miller Family Endowment
  7. Midwest Institute for Nanoelectronics Discovery (MIND)
  8. DOE
  9. State of Florida

向作者/读者索取更多资源

We synthesize hexagonal shaped single-crystal graphene, with edges parallel to the zig-zag orientations, by ambient pressure CVD on polycrystalline Cu foils. We measure the electronic properties of such grains as well as of individual graphene grain boundaries, formed when two grains merged during the growth. The grain boundaries are visualized using Raman mapping of the D band intensity, and we show that individual boundaries between coalesced grains impede electrical transport in graphene and induce prominent weak localization, indicative of intervalley scattering in graphene. (C) 2011 Elsevier Ltd. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据