期刊
SOLID STATE COMMUNICATIONS
卷 149, 期 27-28, 页码 1072-1079出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2009.02.041
关键词
Graphene; Electronic transport
We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile and graphene's transport properties. We discuss the screening of a single Coulomb impurity and the ensemble averaged density profile of graphene in the presence of many randomly distributed impurities. Finally, we discuss graphene's transport properties due to scattering off charged impurities both at low and high carrier density. (C) 2009 Elsevier Ltd. All rights reserved.
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