期刊
SOLID STATE COMMUNICATIONS
卷 149, 期 41-42, 页码 1849-1852出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2009.07.009
关键词
Ferroelectrics; Electronic band structure; Optical properties
资金
- Research Grants Council of the Hong Kong Special Administrative Region [PolyU 5171/07E]
- Hong Kong Polytechnic University [G-YH07, G-YF71]
The structural, electronic, and optical properties of ZnSnO3 were investigated using density functional theory within the generalized gradient approximation. The structure parameters obtained agree well with the experimental results. The electronic structures indicate that ZnSnO3 is a semiconductor with a direct band gap of 1.0 eV. The calculated optical spectra can be assigned to contributions of the interband transitions from valence band O 2p levels to conduction band Sn 5s levels or higher conduction band Zn 3d levels in the low-energy region, and from O 2p to Sn 5p or Zn 4p conduction band in the high-energy region. (C) 2009 Elsevier Ltd. All rights reserved.
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