期刊
SOLID STATE COMMUNICATIONS
卷 149, 期 43-44, 页码 1884-1887出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2009.08.008
关键词
Semiconductor; Metastable defects
Potential fluctuations due to donor-acceptor compensation have been used to observe localization-delocalization transition in semi-insulating GaAs. Photoinduced transients, resulting from relaxation of stored charges in potential valleys, have two components. The long-lived power law decay at low temperature signifies a microscopically inhomogeneous disordered phase, and single exponential decay at a higher temperature signifies a homogeneous ordered phase. Temperature dependence of steady state photocurrent and kinetics of photocurrent decay suggest percolation as a possible mechanism for photoinduced transition in semi-insulating GaAs. (C) 2009 Elsevier Ltd. All rights reserved.
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