期刊
SOLID STATE COMMUNICATIONS
卷 148, 期 9-10, 页码 448-451出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2008.09.014
关键词
ZnO thin films; Sol-gel; Optical properties; Ferroelectric properties
资金
- National Natural Science Foundation of China [50702048, 10802072, 10732100, 10525211, 10672139]
- Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China [706044]
- Doctoral Program of Higher Education [20070530010]
Zn1-xLixO thin films (0.005 <= x <= 0.12) were prepared on Pt/Ti/SiO2/Si substrates via a sol-gel spin coating method. Cathodoluminescence (CL) studies showed that the luminescent efficiency of specimens is degraded sharply with the increment of Li concentration, which indicates that non-radiative centers are introduced during the doping process. From low temperature CL studies, two luminescent peaks centered at 3.28 and 3.31 eV increase gradually with the increment of Li concentration, which are assigned to acceptor bound exciton transitions related to Li-Zn and Li-Zn-Li-i complex, respectively. Ferroelectricity in Zn1-xLixO (0.08 <= x <= 0.12) thin films was found from the polarization hysteresis loop. The remnant polarization increases from 0.12 to 0.23 mu C/cm(2) as the x increases from 0.08 to 0.12. Li-Zn and Li-Zn-Li-i complex play important roles in the ferroelectric appearance of Li-doped ZnO thin films. (C) 2008 Elsevier Ltd. All rights reserved.
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