期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 124, 期 -, 页码 31-38出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2014.01.017
关键词
CdTe; Substrate; Thin-film; Optimisation; Interdiffusion; Back contact
资金
- EPSRC
- EPSRC [EP/H045155/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H045155/1] Funding Source: researchfish
ITO/ZnO/CdS/CdTe/Mo solar cells have been grown in the substrate configuration by a combination of close-space sublimation and RF sputtering. A peak efficiency of 8.01% was achieved. A two stage CdCl2 annealing process was developed, with the first stage contributing to CdTe doping and the second being linked to CdTe/CdS interdiffusion by secondary ion mass spectrometry analysis. The inclusion of a ZnO layer between CdS and ITO layers improved performance significantly (from 17=6% to q=8%) by increasing the shunt resistance, R-SH, from 563 0 cm(2) to 881 Omega cm2. Cross-sectional scanning electron microscopy highlighted the importance of the resistive ZnO layer as numerous pinholes and voids exist in the CdS film. Solar cell performance was also investigated as a function of CdTe thickness, with optimal thicknesses being in the range 3-6 mu m. All devices were deemed to be limited principally by a non-Ohmic back contact, the Schottky barrier height being determined to be 0.51 eV by temperature dependent J-V measurements. Modelling of device performance using SCAPS predicted efficiencies as high as 11.3% may be obtainable upon formation of an Ohmic back-contact. SCAPS modelling also demonstrated that a quasi-Ohmic back-contact may be achievable via inclusion of a highly p-doped (similar to 10(18) cm(-3)) buffer layer, between CdTe and Mo, which also has an optimal electron affinity (4.2 eV). The evaluation of device processing and the in-depth characterisation presented here provides a number of insights towards the continued improvement of substrate cell performance. (C) 2014 The Authors. Published by Elsevier B.V.
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