期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 124, 期 -, 页码 143-149出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2014.01.047
关键词
Recombination; CIGS; Interface; Open-circuit voltage; Bandgap
资金
- U.S. Department of Energy [AC3608G028308]
Separation and quantification of recombination losses in thin-film Cu(In1-x Ga-x)Se-2 solar cells is paramount to understanding the current state-of-the-art and future improvements, but an effective characterization technique has been lacking. We use the recently developed temperature-illumination-dependent open-circuit voltage method to extract individual recombination rates at the buffer/absorber interface, in the space-charge region, and in the quasi-neutral region, as well as the carrier lifetime and surface recombination velocity for devices with low (x=30%) and high (x=84%) Ga absorbers. In the low-Ga absorber, recombination in the quasi-neutral region dominates. In the high-Ga absorber, interface recombination dominates. The open-circuit voltage deficit of the high-Ga device originates from an inadequacy of band bending in the absorber and a lack of strong inversion at the buffer/absorber interface. As two promising mitigating strategies for the open-circuit voltage deficit problem at high-Ga levels, we highlight a homojunction in the absorber or alternative transparent conducting oxides with low work function.(c) 2014 Elsevier B.V. All rights reserved.
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