4.7 Article

Technological status of Cu(In,Ga)(Se,S)2-based photovoltaics

期刊

SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 119, 期 -, 页码 287-290

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2013.08.030

关键词

Thin film; Photovoltaics; Cu(In,Ga)(Se,S)(2); CIGS; technology; Solar cell

向作者/读者索取更多资源

This report presents a selective overview of the technological status of thin film photovoltaics based on chalcopyrite compound Cu(In,Ga)(Se,S)(2) (CIGSSe, or CIGSe if the material does not contain any sulphur) absorber layers. It is not intended to provide a complete list of all active research laboratories or companies in the field, but rather to show the exemplary state of the art of different approaches that are currently pursued to produce low-cost, highly efficient CIGSe or CIGSSe solar cells and modules. For an academic perspective and to assess the potentials, we concentrated on deposition processes leading to highest conversion efficiencies or of special technical interest. On the industrial side, the absorber deposition method was chosen as main differentiator. Highest efficiency values are given to the best of our knowledge and no claim is made for the completeness of the review of all important activities in the field. (C) 2013 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据