期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 105, 期 -, 页码 237-241出版社
ELSEVIER
DOI: 10.1016/j.solmat.2012.06.023
关键词
Antimony; Columnar dots; Intermediate band; Quantum dot
资金
- National Science Council of the Republic of China, Taiwan [NSC 99-2221-E-155-085, NSC 100-2221-E-155-004]
This study demonstrates the feasibility of improving the optical properties of a vertically aligned quantum dot (QD) structure and the performance of a quantum dot intermediate band solar cell (QD-IBSC) by capping a GaAsSb layer on the InAs QDs. Experimental results indicate that dot-size uniformity is significantly improved due to the strain modification in the evolution of the successive vertically aligned dot layer growth. A solar cell device with an InAs/GaAsSb columnar dot structure increases the short-circuit current density (J(sc)) by 8.8%, compared to a GaAs reference cell. This dot structure also increases quantum efficiency by up to 1200 nm through the absorption of lower-energy photons. The InAs/GaAsSb QD-IBSC also improves the open-circuit voltage (V-oc), indicating a reduction in misfit defect density and recombination current density. The results of this study confirm the ability of a columnar InAs/GaAsSb QD structure to enhance the device performance. (c) 2012 Elsevier B.V. All rights reserved.
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