Fabrication of Cu2ZnSnS4 films by sulfurization of Cu/ZnSn/Cu precursor layers in sulfur atmosphere for solar cells

Cu2ZnSnS4 (CZTS) absorbers were grown by sulfurization of Cu/ZnSn/Cu precursors in sulfur atmosphere. The reaction mechanism of CZTS formation from the precursor was analyzed using XRD and Raman spectroscopy. The films with a single phase CZTS were formed at 560 and 580 degrees C by sulfurization for 30 min. The film grown at 560 degrees C showed bi-layer morphology with grooved large grains on the top and dense small grains near the bottom of the film. On the other hand, the film grown at 580 degrees C showed large grains with grooves that are extended from surface top to bottom of the film. The solar cell fabricated with the CZTS film grown at 560 degrees C showed the best conversion efficiency of 4.59% for 0.44 cm(2) with V-oc = 0.545 V, J(sc) = 15.44 mA/cm(2), and FF=54.6. We found that further improvement of the microstructure of CZTS films can increase the efficiency of CZTS solar cells. (C) 2011 Elsevier B.V. All rights reserved.