4.7 Article

Enhancement of the light conversion efficiency of silicon solar cells by using nanoimprint anti-reflection layer

期刊

SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 94, 期 3, 页码 629-633

出版社

ELSEVIER
DOI: 10.1016/j.solmat.2009.11.028

关键词

Nanoimprint; Anti-reflection; Sub-wavelength structure

资金

  1. National Science Council of Republic of China [NSC 96-2112-M-009-024-MY3, NSC 96-2120-M-009-004-MY3]
  2. MOE ATU

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In this report, the results of the fabrication of nanostructured Si molds by e-beam lithography and chemical wet etching are presented. A home-made pneumatic nanoimprint system was used to transfer the mold patterns to a PMMA layer on a Si template using the spin-coating replication/hot-embossing techniques. The patterned PMMA layer was peeled off from the Si template and directly transferred onto the surface of a poly-Si P-N junction solar cell device to serve as the anti-reflection (AR) layer. It provides a simple and low-cost means for large-scale Use in the production of AR layers for improving solar cell performance. A drastic reduction in reflectivity of the AR layer over a broad spectral range was demonstrated. In addition, the great improvement on the light harvest efficiency of the solar cells from 10.4% to 13.5% using the nanostructured PMMA layer as the AR layer was validated. (C) 2009 Elsevier B.V. All rights reserved.

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