期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 94, 期 10, 页码 1627-1629出版社
ELSEVIER
DOI: 10.1016/j.solmat.2010.05.006
关键词
CdTe; p-Doping; Hole density; Non-shallow; Acceptor; Activation energy
Experimental evidence shows that non-shallow acceptor states defect complex V-cd-Cl-Te vertical bar(0/-) and Cu substitution of Cd Cu-cd vertical bar(0/-) play critical roles in p-doping of CdTe in CdS/CdTe thin film solar cells. In this work, two equations are presented by using graphic method, one to determine the limit of p-doping or hole density for such non-shallow acceptor levels, and another to show the quantitative relationship of n-type donor compensation of p-type acceptors in such a material. (C) 2010 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据