期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 94, 期 12, 页码 2332-2336出版社
ELSEVIER
DOI: 10.1016/j.solmat.2010.08.004
关键词
Organic solar cell; Nickel oxide; Interfacial layer; Stability
资金
- Ministry of Knowledge Economy, Republic of Korea [20103020010050]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20103020010050] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This paper reports the effects of p-type NiO thin films deposited by magnetron sputtering on performance of organic solar cells (OSCs). The effects of a p-type NiO interfacial layer between indium tin oxide (ITO) and active layer were examined systematically to increase the efficiency and stability of OSCs. Characterization of the sputter-deposited NiO film revealed it to be a p-type semiconductor with a resistivity of 2.7 x 10(-2) Omega cm. Its conduction type was demonstrated by measuring the Seebeck coefficient (+70 mu V/K). The insertion of a 5 nm-thick NiO layer resulted in a power conversion efficiency and a fill factor as high as 2.8 +/- 0.1% and 0.62 +/- 0.02, respectively, which are comparable to OSCs adopting the conventional conducting polymer, PEDOT:PSS. Furthermore, lifetime of the OSCs adopting the NiO layer was 3 times higher than that of the conventional PEDOT:PSS. (C) 2010 Elsevier B.V. All rights reserved.
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