4.4 Article

High dislocation density of tin induced by electric current

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AIP ADVANCES
卷 5, 期 12, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4937909

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  1. Ministry of Science and Technology of the Republic of China (Taiwan) [NSC 101-2221-E-006-117-MY3]

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A dislocation density of as high as 10(17) / m(2) in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10(3) A/ cm(2). The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstatten grains, and recrystallization. The recrystallization gave rise to grain refining. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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