Electrochemically deposited p-n homojunction cuprous oxide solar cells

The electrical properties of both p- and n-type cuprous oxide (Cu(2)O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu(2)O varied from 3.2 x 10(5) to 2.0 x 10(8) Omega cm, while that of n-type Cu(2)O from 2.5 x 10(7) to 8.0 x 10(8) Omega cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu(2)O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu(2)O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu(2)O, which require doping to reduce. (c) 2008 Elsevier B.V. All rights reserved.