期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 93, 期 10, 页码 1904-1906出版社
ELSEVIER
DOI: 10.1016/j.solmat.2009.06.018
关键词
Microcrystalline silicon; Thin-film silicon; Hydrogen; Raman; FTIR; PECVD; Microstructure
The presence of a pair of peaks in the high wavenumber infrared (IR) absorption region of hydrogenated microcrystalline silicon (mu c-Si:H) has been recently proposed as a strong indicator of poor quality material that is prone to oxidation and is therefore unsuitable for thin-film, photovoltaic applications. In this work, we show that these peaks located at 2083 and 2100cm(-1) are also present in the Raman scattering spectra of mu c-Si:H and therefore can be directly measured on substrates that are suitable for solar cells. We present results for material grown by matrix-distributed electron-cyclotron resonance (MD-ECR) plasma-enhanced chemical vapour deposition (PECVD) on both crystalline silicon and borosilicate glass substrates. The narrow, twinned peaks detected by Raman disappear with time-presumably due to oxidation-although a broad peak at 2100cm(-1) remains. (C) 2009 Elsevier B.V. All rights reserved.
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