期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 93, 期 10, 页码 1853-1859出版社
ELSEVIER
DOI: 10.1016/j.solmat.2009.06.023
关键词
Organic-inorganic devices; Optical properties; Electrical properties; Photovoltaic characteristics; I-V and C-V characteristics
In this work, the construction and photoelectrical characterization of p-type organic semiconductor oxazine (OXZ) in junction with n-type silicon semiconductor are presented. The Stokes shift between absorption and emission of oxazine was analyzed. The analysis of the spectral behavior of the absorption coefficient (alpha) of OXZ, in the absorption region revealed a direct transition, and the energy gap was estimated as 1.82 eV. From the current-voltage, I-V, measurements of the Au/OXZ/n-Si/Al heterojunction in the temperature range 300-375 K, characteristic junction parameters and dominant conduction mechanisms were obtained. This heterojunction showed a photovoltaic behavior with a maximum open circuit voltage, V-oc, of 0.42 V, short-circuit current density, J(sc) of 3.25 mA/cm(2), fill factor, FF, of 0.35 and power conversion efficiency, eta, of 3.2% under 15 mW/cm(2) white light illumination. (C) 2009 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据