4.6 Article

Fabrication of Ni-doped TiO2 thin film photoelectrode for solar cells

期刊

SOLAR ENERGY
卷 106, 期 -, 页码 159-165

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.solener.2014.02.034

关键词

Sol-gel method; Nanocrystalline materials; Quantum dot sensitized solar cell; Photovoltaic

资金

  1. Department of Science and Technology (DST), India

向作者/读者索取更多资源

TiO2 and Ni-doped TiO2 thin films have been prepared by sol-gel dip coating method. X-ray diffraction studies show that TiO2 and Ni-doped nanocrystalline TiO2 thin films are of anatase phase. The surface morphology of CdS quantum dot sensitized TiO2 thin film and CdS quantum dot sensitized Ni-doped TiO2 thin film were analysed by scanning electron microscopy. The absorption edge of TiO2 thin films shift towards longer wavelengths (i.e. red shifted) with Ni doping, which greatly enhances the light absorption of TiO2 in the visible region. The power conversion efficiency of CIS quantum dot sensitized Ni-doped TiO2 (CdS QDS-NT) based solar cell exhibited an efficiency of 1.33%, which is higher than that of CdS quantum dot sensitized TiO2 (CdS QDS-T) (0.98%) solar cells. (C) 2014 Elsevier Ltd. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据