期刊
SOLAR ENERGY
卷 82, 期 2, 页码 100-105出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.solener.2007.07.004
关键词
CuInSe2 monocrystals; directed crystallization; mobility; scattering mechanisms; impurity levels
Using two-temperature synthesis method with the further directed crystallization under the radial and slight horizontal temperature gradients, facilitating the convection and mixing of the melt, the authors obtained monocrystals of n- and p-CuInSe2 with controlled deviation from the stoichiometry using the excess In and Se. We have carried out the measurements of the conductivity and Hall coefficient in the temperature interval 70-415 K and investigated Hall mobility as the function of temperature, determining the dominating carrier scattering mechanisms. It was found that the electrical properties of n- and p-CuInSe2 are caused by the defects of various types depending on the growth conditions and stoichiometry deviations. The energy position of the impurity levels was identified to be 0.055 +/- 0.003 eV and 0.022 +/- 0.003 eV above the valence band for acceptor levels and 0.010 +/- 0.002 eV below the conduction band for the donor level. (c) 2007 Elsevier Ltd. All rights reserved.
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