相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films
Vandana et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2014)
Blistering Induced Degradation of Thermal Stability Al2O3 Passivation Layer in Crystal Si Solar Cells
Meng Li et al.
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE (2014)
Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process
G. Seguini et al.
APPLIED PHYSICS LETTERS (2013)
Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells
Junpei Irikawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Chemical and Morphological Characteristics of ALP Al2O3 Thin-Film Surfaces after Immersion in pH Buffer Solutions
Joel Molina Reyes et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2013)
Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
Joerg Haeberle et al.
BEILSTEIN JOURNAL OF NANOTECHNOLOGY (2013)
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
Gijs Dingemans et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2012)
A comparative study of silicon surface passivation using ethanolic iodine and bromine solutions
Neha Batra et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2012)
Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
G. Dingemans et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2011)
Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon
J. M. Rafi et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Excellent silicon surface passivation with 5 Å thin ALD Al2O3 layers: Influence of different thermal post-deposition treatments
Armin Richter et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2011)
High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
Shinsuke Miyajima et al.
APPLIED PHYSICS EXPRESS (2010)
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
Byungha Shin et al.
APPLIED PHYSICS LETTERS (2010)
Atomic Layer Deposition: An Overview
Steven M. George
CHEMICAL REVIEWS (2010)
Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
G. Dingemans et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2010)
Experimental and ab initio infrared study of χ-, κ- and α-aluminas formed from gibbsite
L. Favaro et al.
JOURNAL OF SOLID STATE CHEMISTRY (2010)
Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
G. Dingemans et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2010)
Advances in crystalline silicon solar cell technology for industrial mass production
Tatsuo Saga
NPG ASIA MATERIALS (2010)
Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
Pierre Saint-Cast et al.
APPLIED PHYSICS LETTERS (2009)
Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
Tsu-Tsung Li et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2009)
An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
Michael T. Seman et al.
CHEMICAL VAPOR DEPOSITION (2008)
Silicon surface passivation by atomic layer deposited Al2O3
B. Hoex et al.
JOURNAL OF APPLIED PHYSICS (2008)
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
B. Hoex et al.
JOURNAL OF APPLIED PHYSICS (2008)
Properties of aluminum oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapor deposition
C. Cibert et al.
THIN SOLID FILMS (2008)
Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
G. Agostinelli et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2006)
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
B. Hoex et al.
APPLIED PHYSICS LETTERS (2006)
ALD and characterization of aluminum oxide deposited on Si (100) using tris(diethylamino) aluminum and water vapor
Rajesh Katamreddy et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2006)
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
RL Puurunen
JOURNAL OF APPLIED PHYSICS (2005)
Thin-film silicon solar cell technology
AV Shah et al.
PROGRESS IN PHOTOVOLTAICS (2004)
Low-temperature Al2O3 atomic layer deposition
MD Groner et al.
CHEMISTRY OF MATERIALS (2004)
Characterization and catalytic activity of differently pretreated Pd/Al2O3 catalysts:: the role of acid sites and of palladium-alumina interactions
M Skotak et al.
JOURNAL OF CATALYSIS (2004)
First-principles calculations of intrinsic defects in Al2O3 -: art. no. 085110
K Matsunaga et al.
PHYSICAL REVIEW B (2003)
Review and comparison of equations relating bulk lifetime and surface recombination velocity to effective lifetime measured under flash lamp illumination
J Brody et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2003)
Very low bulk and surface recombination in oxidized silicon wafers
MJ Kerr et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2002)
Photoemission study of energy-band alignments and gap-state density distributions for high-k dielectrics
S Miyazaki et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2001)
Wet-chemical passivation of Si(111)- and Si(100)-substrates
H Angermann et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2000)
Band offsets of wide-band-gap oxides and implications for future electronic devices
J Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)